CN1519923A CNA2004100035435A CN200410003543A CN1519923A CN 1519923 A CN1519923 A CN 1519923A CN A2004100035435 A CNA2004100035435 A CN A2004100035435A CN 200410003543 A CN200410003543 A CN 200410003543A CN 1519923 A CN1519923 A CN 1519923A Authority CN China Prior art keywords copper layer film semiconductor device
전압 가변 커패시터(40)는 도핑된 층(42)을 갖는 지지기판(41)과, 도핑된 층상에 위치한 절연층(45)과, 제 1(47), 제 2(49), 및 제 3(51) 커패시터들을 규정하기 위해 상기 도핑된 층과 평행하게 상기 절연층상에 위치되고 상기 절연층에 의해 상기 도핑된층으로부터 이격된 제
Many translation examples sorted by field of work of "integrated circuit computer" – English-Chinese dictionary and smart translation assistant.
Many translation examples sorted by field of work of "integrated circuit card" – English-Chinese dictionary and smart translation assistant.
Many translation examples sorted by field of work of "interface integrated circuit" – English-Chinese dictionary and smart translation assistant.
US4914546A US07/306,375 US30637589A US4914546A US 4914546 A US4914546 A US 4914546A US 30637589 A US30637589 A US 30637589A US 4914546 A US4914546 A US 4914546A Authority US United States Prior art keywords layer highly conductive conductive material insulation combination Prior art date 1989-02-03 Legal status (The legal status is an
CN103456497B CN201210180269.3A CN201210180269A CN103456497B CN 103456497 B CN103456497 B CN 103456497B CN 201210180269 A CN201210180269 A CN 201210180269A CN 103456497 B CN103456497 B CN 103456497B Authority CN China Prior art keywords ridge capacitor electrode layer interconnection area raceway groove Prior art date 2012-06-04 Legal
CN102386507A CN2011102537008A CN201110253700A CN102386507A CN 102386507 A CN102386507 A CN 102386507A CN 2011102537008 A CN2011102537008 A CN 2011102537008A CN 201110253700 A CN201110253700 A CN 201110253700A CN 102386507 A CN102386507 A CN 102386507A Authority CN China Prior art keywords contact main body
CN106449605A CN201510493002.3A CN201510493002A CN106449605A CN 106449605 A CN106449605 A CN 106449605A CN 201510493002 A CN201510493002 A CN 201510493002A CN 106449605 A CN106449605 A CN 106449605A Authority CN China Prior art keywords electrode dielectric layer mim capacitor capacitor structure electric capacity Prior art date 2015
集成电路：在大规模集成电路中,mos电容器是必不可少的组成部分,用于滤波、耦合、储能等。 总结,mos电容器是电子技术中的核心元件,其制作过程精确细且复杂,涉及到多个步骤和关键技术。理解mos电容器的结构、...
首先,多晶硅电阻可以在cmos、双极和bicmos技术中制造,这使得它们与现代集成电路工艺兼容,便于集成到复杂的芯片设计中。其次,多晶硅电阻可以通过,这为电路设计
一、电容概述 • 电容器,能够存储电荷的器件。 • 单位：法拉（F） 两块导电材料中间存在绝缘介质就会形成电容 • 电容充电 二、MOS集成电路中的电容器 MOS集成电路中的电容器几乎都是
具有电路集成性的高频微型超级电容器（杂志封面） 随着摩尔定律的发展,电路中基于MOS管的逻辑器件体积不断减小,但是以电容器为代表的无源元器件并未获得突破性发展。
Many translation examples sorted by field of work of "opto-hybrid integrated circuit" – English-Chinese dictionary and smart translation assistant.
CN1509498A CNA028101804A CN02810180A CN1509498A CN 1509498 A CN1509498 A CN 1509498A CN A028101804 A CNA028101804 A CN A028101804A CN 02810180 A CN02810180 A CN 02810180A CN 1509498 A CN1509498 A CN 1509498A Authority CN China Prior art keywords memory element area layer memory separately Prior art date 2001-05-18 Legal
CN102386507B CN201110253700.8A CN201110253700A CN102386507B CN 102386507 B CN102386507 B CN 102386507B CN 201110253700 A CN201110253700 A CN 201110253700A CN 102386507 B CN102386507 B CN 102386507B Authority CN China Prior art keywords contact capacitor main body module earth shield Prior art date 2010-07-13 Legal status (The
Many translation examples sorted by field of work of "integrated circuit chip" – English-Chinese dictionary and smart translation assistant.
本文总结了各种不同介质电容的特性,包括陶瓷电容、电解电容、薄膜电容等；同时对一些特殊场合的电容,如安规电容、穿心电容、超级电容等进行了简要说明,旨在帮助大家了解不同种类电容的特性和使用场景。
KR100419184B1 KR10-2001-0084614A KR20010084614A KR100419184B1 KR 100419184 B1 KR100419184 B1 KR 100419184B1 KR 20010084614 A KR20010084614 A KR 20010084614A KR 100419184 B1 KR100419184 B1 KR 100419184B1 Authority KR South Korea Prior art keywords current voltage latch voltage pattern simulator Prior art date 2001-12-26 Application number
Many translation examples sorted by field of work of "catalogue integrated circuit" – English-Chinese dictionary and smart translation assistant.
CN1064196C CN96117299A CN96117299A CN1064196C CN 1064196 C CN1064196 C CN 1064196C CN 96117299 A CN96117299 A CN 96117299A CN 96117299 A CN96117299 A CN 96117299A CN 1064196 C CN1064196 C CN 1064196C Authority CN China Prior art keywords trap independent capacitor well semiconductor device Prior art date 1995-10-25 Legal status
Many translation examples sorted by field of work of "integrated circuit testing" – English-Chinese dictionary and smart translation assistant.
在电子产品中,电容器是必不可少的电子器件,它在电子设备中充当整流器的平滑滤波、电源的退耦、交流信号的旁路、交直流电路的交流耦合等。 由于电容器的类型和结构种
Many translation examples sorted by field of work of "vacuum integrated circuit" – English-Chinese dictionary and smart translation assistant.
CN1199264C CNB008095671A CN00809567A CN1199264C CN 1199264 C CN1199264 C CN 1199264C CN B008095671 A CNB008095671 A CN B008095671A CN 00809567 A CN00809567 A CN
(57) （修正有）容量の両端子に発生する寄生容量をもつもの であって、線形性の保たれた容量を有する半導体装置を 提供する。半導体基板上に形成された第1の絶縁膜と、 第1の絶縁膜上に形成された第1の導体膜4,5と第1 の導体膜4,5上に形成された第2の絶縁膜37と
본 발명은 다양한 단계의 전압분배가 가능한 전압 분배 저항을 제공한다. 본 발명에 따른 반도체 기판에 형성되는 전압 분배 저항은, 반도체 기판 상에 형성되는 다결정 규소층, 다결정 규소층의 일부 영역 상에 형성되는 금속층, 다결정 규소층 및 금속층을 덮는 층간절연막을 포함한다.
CN1199264C CNB008095671A CN00809567A CN1199264C CN 1199264 C CN1199264 C CN 1199264C CN B008095671 A CNB008095671 A CN B008095671A CN 00809567 A CN00809567 A CN 00809567A CN 1199264 C CN1199264 C CN 1199264C Authority CN China Prior art keywords layer interpolater substrate oxide layer crystal seed Prior art date 1999-06-28 Legal
Many translation examples sorted by field of work of "semicustom integrated circuit" – English-Chinese dictionary and smart translation assistant.
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